Infrared detector and fabrication method thereof

Details Infrared detector and fabrication method thereof Infrared detector and fabrication method thereof

1996-08-07

1999-11-02

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257449, 257 73, 257467, 257470, 2503383, 2503384, H01L 2947, H01L 3107, H01L 31108

Patent

active

059776030

ABSTRACT:
In a IR detector and a fabrication method thereof, the IR detector has a insulating thin film (3) made up of insulating material, many semiconductor layers (1) each having an island shape formed on the insulating thin film (3), a forward bias connection section (5) and a backward bias connection section (6) formed for each semiconductor layer (1) to be forward and backward biases to an external bias voltage, and a metal thin film (2) for electrically connecting the semiconductor layers (1) to each other through both the forward bias connection section and the backward bias connection section (5 and 6).

REFERENCES:
patent: 2588254 (1952-03-01), Lark-Horovitz
patent: 4211888 (1980-07-01), Stein
patent: 4244750 (1981-01-01), Chenevas-Paule
patent: 4826777 (1989-05-01), Ondris
patent: 5010251 (1991-04-01), Grinberg et al.
"The Electrical Properties of Polycrystalline Silicon Films" by John Seto, Journal of Applied Physics, vol. 46, No. 12, Dec. 1975.
"Schottky Barrier Thermistor" by Kimura et al, Technical Digest of the 11th Sensor Symposium 1992 pp. 107-110.
Infrared Linear Image Sensor Using a Poly-Si pn Junction Diode Array by Tanaka et al, Infrared Phys., vol. 33, No. 4, pp. 229-236, 1992.

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