Semiconductor device having an oxygen-rich punchthrough region e

Details Semiconductor device having an oxygen-rich punchthrough region e Semiconductor device having an oxygen-rich punchthrough region e

1997-12-19

1999-11-02

Abraham, Fetsum

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257344, 257336, 257337, 257338, 257361, 257362, 257363, 257497, 257498, H01L 2954

Patent

active

059776021

ABSTRACT:
A semiconductor device having an oxygen-rich punchthrough region under the channel region, and a process for fabricating such a device are disclosed. In accordance with one embodiment, a semiconductor device is formed by forming an oxygen-rich punchthrough region in a substrate, and forming a channel region over the oxygen-rich punchthrough region. The use of an oxygen-rich punchthrough region may, for example, inhibit the diffusion of dopants used in forming the channel region.

REFERENCES:
patent: 5418375 (1995-05-01), Hoskins et al.
patent: 5514902 (1996-05-01), Kawasaki et al.

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