Apparatus for treating the surface of a semiconductor substrate

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means

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156626, 156646, 156662, 252 793, 134 3, 134 991, 1341021, H01L 2100

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active

053363566

ABSTRACT:
In an apparatus for treating the surface of a semiconductor substrate, hydrogen fluoride is dissolved in a nonaqueous solvent, ionizing anhydrous hydrogen fluoride, and the solution is vaporized. The vapor of the solution is introduced onto the surface of the semiconductor in a reaction chamber to treat this surface. The semiconductor substrate can be subjected to treatments, such as cleaning and etching, without producing reactions products on the surface.

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patent: 5173152 (1992-12-01), Tanaka
Novak et al, "The Dry Etching Of Oxides Using Anhydrous HF", Extended Abstracts of the 22nd (1990 International) Conference on Solid State Devices and Materials, Sendai, 1990, pp. 1091-1093.

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