Patent
1987-07-10
1990-05-22
Hille, Rolf
357 4, 357 237, H01L 2348, H01L 2946, H01L 2954
Patent
active
049281615
ABSTRACT:
A thin-film transistor device which is easy to fabricate and which has a high reliability. The device includes a substrate and a thin-film transistor formed thereon including a first conducting layer deposited on the substrate, a gate insulating layer formed on the first conducting layer, a semiconductor layer deposited on the gate insulating layer, and source and drain electrodes on the semiconductor layer. A multi-level wiring section is provided adjacent the thin-film transistor, including a first conducting wiring layer formed on the substrate, wiring insulating layer formed on the first conducting wiring layer, and a second conducting wiring layer deposited on the wiring insulating layer and contacting the first conducting wiring layer as well as a portion of the thin-film transistor. The gate insulating layer and the wiring insulating layer are made of the same inorganic material and are of the same thickness.
REFERENCES:
patent: 4065781 (1977-12-01), Gutknecht
patent: 4119992 (1978-10-01), Ipri et al.
patent: 4609930 (1986-09-01), Yamazaki
patent: 4618878 (1986-10-01), Aoyama et al.
patent: 4646424 (1987-03-01), Parks et al.
patent: 4695856 (1987-09-01), Warabisako et al.
Fuji 'Xerox Co., Ltd.
Hille Rolf
Le Hoang-anh
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