Oscillators – Solid state active element oscillator – Transistors
Patent
1982-02-02
1984-11-27
Grimm, Siegfried H.
Oscillators
Solid state active element oscillator
Transistors
331 96, 331100, 331179, 331117R, 331117D, H03B 512, H03B 518
Patent
active
044853556
ABSTRACT:
A very simple oscillator circuit, using a FET pair with RF coupled, DC isolated gates, selectively operates at two widely separated microwave frequencies. The two FETs are DC isolated so that one of them can be pinched off (to act as a passive element) while the other remains active. Thus, for example, a two-FET push-push oscillator operating at 20 GHz can switch downband, when one FET is pinched off, to act as a fundamental mode oscillator at 121/2 GHz. The circuit is integrable. In alternative embodiments, more than two FETs are used, for switching over a wider frequency range when one or two of them is pinched off.
REFERENCES:
Scott et al., "Octave Band Varactor-Tuned GaAs FET Oscillators", IEEE International Solid-State Circuits Conference, (Feb. 1981), pp. 138-139.
Scott, B. N., "GaAs Switched Geometry Oscillator for X and Ku Bands", IEEE International Solid-State Circuits Conference, (Feb. 11, 1982), pp. 190-191.
Comfort James T.
Grimm Siegfried H.
Groover III Robert
Mis D. C.
Sharp Melvin
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