Method of cleaning semiconductor wafers after lapping

Details Method of cleaning semiconductor wafers after lapping Method of cleaning semiconductor wafers after lapping

1998-02-09

1999-11-02

Utech, Benjamin

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438745, 438753, H01L 21304

Patent

active

059769831

ABSTRACT:
There is disclosed a method of cleaning a semiconductor wafer after lapping in the manufacture thereof comprising the steps of slicing a monocrystalline ingot into a semiconductor wafer, and chamfering, lapping, acid-etching, and then mirror-polishing the thus-obtained semiconductor wafer. The semiconductor wafer is cleaned in a strong-alkaline aqueous solution at a point of time after the lapping and before the acid-etching, such that the surface of the semiconductor wafer is dissolved in an amount in the range of 4-8 .mu.m. The cleaning method prevents generation of a protrusion on the outer circumferential end portion of the wafer in the subsequent acid-etching step.

REFERENCES:
patent: 4918030 (1990-04-01), Lamb et al.
patent: 5360509 (1994-11-01), Zakaluk et al.
patent: 5494862 (1996-02-01), Kato et al.

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