Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

1988-04-11

1990-05-22

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437199, 437197, 437188, 437248, H01L 2124, H01L 2128

Patent

active

049277839

ABSTRACT:
A semiconductor device in accordance with the present invention comprises: a silicon substrate (1); an insulator layer (2) formed on the silicon substrate; a contact hole (8e) opened through the insulator layer; and a filler of doped silicon (5) grown on the silicon substrate (1) in the contact hole (8e) by solid phase precipitation from an alloy film (6) containing silicon and a doping element.

REFERENCES:
patent: 4271424 (1981-06-01), Inayoshi
patent: 4502207 (1985-03-01), Ohshima et al.
patent: 4538344 (1985-09-01), Okumura et al.
patent: 4546366 (1985-10-01), Buchanan
patent: 4584760 (1986-04-01), Okazawa
patent: 4584767 (1986-04-01), Gregory
VLSI Metalization Using Aluminum and its Alloy-Part II, D. Pramanik and A. N. Saxena, Solid State Technology/Mar. 83.

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