Semiconductor laser

Details Semiconductor laser Semiconductor laser

1997-02-18

1999-03-23

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

058870113

ABSTRACT:
A semiconductor laser includes a first conductivity type GaAs substrate; a AlGaAs double heterojunction structure disposed on the GaAs substrate and including an upper cladding layer having a mesa ridge stripe with a side surface that makes an angle larger than 90.degree. with a front surface of the upper cladding layer; a first current blocking layer of first conductivity type AlGaAs; and a second current blocking layer of first conductivity type AlGaAs, the first and second current blocking layers covering the mesa ridge stripe. The Al compositions of the first and second current blocking layers are larger than that of the upper cladding layer, maintaining an equivalent refractive index of an active region higher than that of other portions of the semiconductor laser. As a result, the differences between the lattice constant of the second current blocking layer and the GaAs substrate or the AlGaAs upper cladding layer are smaller than in prior art semiconductor lasers. Since the second current blocking layer is in the vicinity of the active region in the mesa ridge stripe, stress applied to the active region is reduced, thereby producing a semiconductor laser that facilitates ridge width control and burying layer growth, and with improved reliability.

REFERENCES:
patent: 5210767 (1993-05-01), Arimoto et al.
patent: 5303255 (1994-04-01), Kudo et al.
patent: 5361271 (1994-11-01), Takiguchi et al.
patent: 5386429 (1995-01-01), Naito et al.
patent: 5528617 (1996-06-01), Kobayashi et al.

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