Self-aligned MESFET having reduced series resistance

Details Self-aligned MESFET having reduced series resistance Self-aligned MESFET having reduced series resistance

1981-02-12

1983-09-27

Edlow, Martin H.

357 15, 357 41, H01L 2978

Patent

active

044070047

ABSTRACT:
Disclosed herein is a structure and process for a self-aligned metal semiconductor field effect transistor having the characteristics of a high speed, high density, low power LSI circuit and specifically an improved high device gain MESFET device using conventional photographic techniques. The inventive MESFET device has improved high device gain as a result of the elimination of series resistance, increased circuit integration density, and improved speed capability due to the elimination of spacings between gate and drain and gate and source and the improved high device gain.

REFERENCES:
patent: 4077111 (1978-03-01), Driver

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