Semiconductor pressure transducer or other product employing lay

Details Semiconductor pressure transducer or other product employing lay Semiconductor pressure transducer or other product employing lay

1981-04-20

1983-09-27

Albritton, C. L.

Electrical resistors

Strain gauge type

G01L 122

Patent

active

044069928

ABSTRACT:
A monocrystalline silicon substrate has formed on a surface a grating pattern manifested by a series of parallel grooves, a layer of dielectric is thermally grown on said surface to replicate said pattern on an opposite surface of said dielectric and a layer of silicon deposited on said opposite surface of said dielectric is single crystal silicon determined by said grating. The structure formed enables the deposited single crystal layer to be selectively treated to provide at least one piezoresistive sensing element to thereby provide a transducer having both the force collector or substrate and the sensing elements of single crystal silicon and dielectrically isolated by means of said dielectric layer.

REFERENCES:
patent: 4023562 (1977-05-01), Hynecek et al.
patent: 4188258 (1980-02-01), Mounteer et al.
patent: 4202217 (1980-05-01), Kurtz et al.
patent: 4348254 (1982-09-01), Lindmayer
M. W. Geis et al., App. Phys. Lett., "Crystallographic Orientation of Silicon on an Amorphous Substrate Using an Artificial Surface-Relief Grating and Laser Crystallization", pp. 71-73, vol. 35, No. 1, Jul. 1, 1979.

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