Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1997-07-03
1999-03-23
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 72, 257659, H01L 2904
Patent
active
058863648
ABSTRACT:
An electro-optical device such as a liquid crystal device comprises a transparent substrate and a plurality of thin film transistors for driving pixel electrodes. In order to prevent an undesirable influence of light incident on the thin film transistors, a light shielding layer is interposed between the thin film transistors and the transparent substrate. Another portion of the light-shielding layer which corresponds to the pixel electrodes, has been changed to transparent by selectively oxidizing or nitriding the layer.
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Ferguson Jr. Gerald J.
Prenty Mark V.
Robinson Eric J.
Semiconductor Energy Laboratory Co,. Ltd.
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