Method of producing semiconductor device

Details Method of producing semiconductor device Method of producing semiconductor device

1985-04-23

1987-01-20

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 29578, 29580, 29576W, 148 15, 148DIG82, 148DIG85, 357 41, 357 49, 357 56, 156649, 156647, H01L 21308, H01L 2978

Patent

active

046371281

ABSTRACT:
A method of producing a semiconductor device comprises an isolation step for forming an n-type region in contact with p.sup.+ -type source and drain regions of a p-channel floating gate MOS transistor in the surface area of an n-type semiconductor substrate and an n.sup.+ -type region in contact with the n-type region. In this isolation step, and oxidation resistant film pattern is formed on the element region of the MOS transistor. An anisotropic etching is applied to the substrate with the oxidation resistant film pattern used as a mask to form an inclined portion and a flat portion, followed by forming a SiO.sub.2 film of a prescribed thickness to cover both the inclined and flat portions. Further, an n-type impurity is introduced by ion implantation into the substrate through the SiO.sub.2 film in a direction perpendicular to the flat portion, followed by annealing the ion-implanted region.

REFERENCES:
patent: 4268951 (1981-05-01), Elliott et al.
patent: 4402761 (1983-09-01), Feist
patent: 4444605 (1984-04-01), Slawinski
patent: 4453306 (1984-06-01), Lynch et al.
patent: 4455193 (1984-06-01), Jeuch et al.
patent: 4461072 (1984-07-01), Wada et al.
patent: 4472874 (1984-09-01), Kurosawa et al.
patent: 4486943 (1984-12-01), Ryden et al.

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