MISFET and method of manufacture

Details MISFET and method of manufacture MISFET and method of manufacture

1970-03-30

1976-02-03

Larkins, William D.

357 13, 357 23, 357 52, 357 86, H01L 2978

Patent

active

039368629

ABSTRACT:
A novel MISFET and method of manufacture involving a five mask process suitable for making N-channel devices alone, P-channel devices alone or both N and P-channel devices simultaneously. Novel topside contact means, field inversion protection means and gate breakdown protection means are disclosed.

REFERENCES:
patent: 3395320 (1968-07-01), Ansley
patent: 3440502 (1969-04-01), Lin et al.
patent: 3469155 (1969-09-01), Van Beek
patent: 3519897 (1970-07-01), Ferrell
patent: 3555374 (1971-01-01), Usada
patent: 3577043 (1971-05-01), Cook
GE Transistor Manual, 7th Edition (1964), p. 12.

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