Voltage variable capacitor having amorphous dielectric film

Details Voltage variable capacitor having amorphous dielectric film Voltage variable capacitor having amorphous dielectric film

1991-10-15

1993-03-09

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Voltage variable capacitance device

257 2, 257 52, 257646, 331177V, 361277, H01L 2992

Patent

active

051928710

ABSTRACT:
A semiconductor device (10), comprising a semiconductor substrate (12) having a layer of semiconductor material (14) deposited, coated or grown epitaxially as a single crystal or polysilicon on the surface of the substrate. The layer of material is also a semiconductor material, having a higher resistivity than the substrate it is deposited on. A dielectric layer (16) of a metal oxide is formed on the high resistivity layer (14), which is then covered with an amorphous layer (18) of a metal oxide dielectric. Zirconium titanate may be used as a metal oxide dielectric layer. A metal electrode (20) is formed on the amorphous layer (18) to form a Metal Insulator Semiconductor device. In an alternative configuration, the amorphous layer (18) may instead be placed between the high resistivity layer (14) and the dielectric layer (16), or a second amorphous layer (22) may be added between the high resistivity layer and the dielectric layer. When the device is electrically energized, a depletion region is formed in the high resistivity layer, creating a voltage variable capacitor.

REFERENCES:
patent: 3579278 (1971-05-01), Heer
patent: 3604990 (1971-09-01), Sigsbee
patent: 3611070 (1971-10-01), Engeler
patent: 3624895 (1971-12-01), MacIver et al.
patent: 3634738 (1972-01-01), Leith et al.
patent: 3860945 (1975-01-01), Dawson
patent: 4973922 (1990-11-01), Embree et al.

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