Semiconductor device

Details Semiconductor device Semiconductor device

1988-03-28

1989-12-12

Hille, Rolf

357 65, 357 64, H01L 2712, H01L 2348, H01L 29167

Patent

active

048871435

ABSTRACT:
The present invention relates to a semiconductor device having a contact electrode structure and a method of manufacturing the same. An insulating layer is provided in a second semiconductor layer or in a junction part between the second semiconductor layer and a first semiconductor layer correspondence to a contact hole. Therefore, even if a pit generated at a junction part between the second semiconductor layer and a conductive layer in the contact hole grows, the growth of the pit is inhibited by the insulating layer, whereby leakage current caused between the first and second semiconductor layers can be reduced, a reliability of the device being thus enhanced.

REFERENCES:
patent: 4164461 (1979-08-01), Schilling
patent: 4523213 (1985-06-01), Konaka et al.
patent: 4706378 (1987-11-01), Havemann
patent: 4717677 (1988-01-01), McLaughlin et al.
Electronics Letters, Aug. 31, 1978, vol. 14, No. 18, pp. 593-594, "C.M.O.S. Devices Fabricated on Buried SiO.sub.2 Layers Formed by Oxygen Implanatation Into Silicon".

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