Thin film copper transition between aluminum and indium copper f

Details Thin film copper transition between aluminum and indium copper f Thin film copper transition between aluminum and indium copper f

1977-01-26

1978-09-19

Clawson, Jr., Joseph E.

357 4, 357 23, 357 45, 357 67, H01L 2946, H01L 2954

Patent

active

041157990

ABSTRACT:
A stable, low resistance electrical connection is made between thin film aluminum areas and thin film indium-copper conductive areas of an electronic circuit layout. The transition is made by deposition of a thin copper film as a transition region to connect the aluminum and indium-copper areas.

REFERENCES:
patent: 3483038 (1969-12-01), Hui et al.
patent: 3737340 (1973-06-01), Maeda et al.
patent: 4000842 (1977-01-01), Burns
patent: 4040073 (1977-08-01), Luo
patent: 4065781 (1977-12-01), Gutknecht

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