Field effect transistor with reduced series resistance

Details Field effect transistor with reduced series resistance Field effect transistor with reduced series resistance

1977-11-29

1978-09-19

Wojciechowicz, Edward J.

357 23, 357 89, H01L 2978, H01L 2980

Patent

active

041157931

ABSTRACT:
A field effect transistor having an additional highly doped source region contiguous to the source region and protruding into the channel having a shape approximately conforming to the shape of the depletion layer and almost contiguous with the depletion layer in a desired operative state, thereby reducing the series resistance from the source to the pinch-off point without increasing the capacitance between the source and the gate. The improvement is particularly effective for devices of a high power, high speed and high frequency use and is compatible with the integrated circuit techniques.

REFERENCES:
patent: 3430113 (1969-02-01), Roosild et al.

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