Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1997-08-08
1999-03-23
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117 14, 117 15, 117 35, 117902, 117932, C30B 1532
Patent
active
058853448
ABSTRACT:
A non-Dash neck method of preparing a single crystal silicon rod, pulled in accordance with the Czochralski method. The process is characterized in that a large diameter, dislocation-free seed crystal is allowed to thermally equilibrate prior to initiation of silicon rod growth, in order to avoid the formation of dislocations resulting from thermal shock to the crystal. The process is further characterized in that a resistance heater is used to melt the lower tip of the seed crystal to form a molten cap before it is brought into contact with the melt. The process yields a single crystal silicon rod having a short, large diameter neck which is dislocation-free, and which is capable of supporting a silicon rod which weighs at least about 100 kilograms during growth and subsequent handling.
REFERENCES:
patent: 3135585 (1964-06-01), Dash
patent: 3759670 (1973-09-01), Rummel
patent: 5126113 (1992-06-01), Yamagishi et al.
patent: 5501172 (1996-03-01), Murai
patent: 5578284 (1996-11-01), Chandrasekhar
W. Dash "Growth of Silicon Crystals Free Dislocations" Journal of Applied Physics, vol. 30, No. 4 (Apr. 1959).
K. Kim et al. "Maximum Length of Large Diameter Czochralski Silicon Single Crystals at Fracture Stress Limit of Seed" Journal of Crystal Growth, vol. 100 (1990) pp. 527-528.
Chandrasekhar Sadasivam
Kim Kyong-Min
Kunemund Robert
MEMC Electronic Materials , Inc.
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