Compound semiconductor vapor phase epitaxial device

Details Compound semiconductor vapor phase epitaxial device Compound semiconductor vapor phase epitaxial device

1993-02-03

1994-12-06

Bueker, Richard

Coating apparatus

Gas or vapor deposition

With treating means

118715, C23C 1600

Patent

active

053707389

ABSTRACT:
A compound semiconductor vapor phase epitaxial device comprises a cylindrical reactor vessel, a plurality of flow channels disposed in the reactor vessel, a crystal substrate disposed in one of the flow channels, a plurality of gas supply pipes for respectively supplying gas containing element of compound to be grown on the crystal substrate and at least one slit or linearly arranged fine holes communicating adjacent two flow channels so as to extend in a direction normal to a direction of the gas flow to form a laminate layer flow consisting of two or more than two gases at an upstream portion of location of the crystal substrate.

REFERENCES:
patent: 4533410 (1985-08-01), Ogura
patent: 4731255 (1988-03-01), Maeda
patent: 4808551 (1989-02-01), Mori
patent: 5070814 (1991-12-01), Whiffin
patent: 5183510 (1993-02-01), Kimura
patent: 5254210 (1993-10-01), Jones

Affiliated with

Also associated with

Rating

Compound semiconductor vapor phase epitaxial device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Compound semiconductor vapor phase epitaxial device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Compound semiconductor vapor phase epitaxial device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-211902