Semiconductor integrated circuit device having built-in voltage

Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – With specific source of supply or bias voltage

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327 51, H03K 338

Patent

active

RE0361593

ABSTRACT:
A semiconductor integrated circuit device includes a voltage drop circuit for generating a dropped voltage from a power supply voltage externally supplied to a power supply line, and a plurality of circuits respectively connected to the voltage drop circuit and driven by the dropped voltage. A switching unit, which is connected to at least one of the circuits, connects the power supply line to the above one of the circuits in synchronism with operation of the above one of the circuits. The above one of the circuits is driven by currents from both the voltage drop unit and the power supply line in synchronism with the operation thereof.

REFERENCES:
patent: 5023476 (1991-06-01), Watanabe et al.
patent: 5223751 (1993-06-01), Simmons et al.
patent: 5394028 (1995-02-01), Feddeler et al.
IEEE Journal of Solid-State Circuits, Nov. 1991, vol. 26, No. 11, "A Circuit Technology for Sub-10-ns ECL 4-Mb BiCMOS Dram's", Kawahara et al.
1991 Symposium on VLSI Circuits, Digest of Technical Papers, "A Circuit Technology for Sub-10ns ECL 4Mb BiCMOS DRAMs", Kawahara et al, May 30-Jun. 1, 1991, pp. 131-132.

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