Photochemical vapor deposition process

Details Photochemical vapor deposition process Photochemical vapor deposition process

1992-11-06

1994-05-03

Padgett, Marianne

Coating processes

Direct application of electrical, magnetic, wave, or...

Photoinitiated chemical vapor deposition

427583, 427584, B05D 306

Patent

active

053086511

ABSTRACT:
As to technical subject matters of attempting increase of deposition rate and improvement of film quality and removing restriction of light source and source gas in the photo CVD process, the promotion of photolysis of the source gas is achieved by use of a pulse laser beam together with a continuous light, application of plural laser beams wherein each pulse of at least one second pulse laser beam is irradiated into each interval between a pulse and the next pulse in a first lase beam, and further introduction of an additive gas in addition to the source gas into a reaction vessel and particularly the provision of photo CVD process advantageously adaptable for the production of semiconductor is realized.

REFERENCES:
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patent: 4581249 (1986-04-01), Kamiya
patent: 4608117 (1986-08-01), Ehrlich et al.
patent: 4626449 (1986-12-01), Hirai et al.
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patent: 4661679 (1987-04-01), Pardee
patent: 4782035 (1988-11-01), Fujiwara
patent: 5112647 (1992-05-01), Takabayashi
Boyer et al., "Laser-induced CVD of SiO.sub.2 ", Appl. Phys. Lett. 40(5) Apr. 15, 1982 pp. 716-718.

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