Edge-heat-sink technique for zone melting recrystallization of s

Details Edge-heat-sink technique for zone melting recrystallization of s Edge-heat-sink technique for zone melting recrystallization of s

1992-09-10

1994-05-03

McFarlane, Anthony

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

For crystallization from liquid or supercritical state

118641, 373139, 117933, C30B 1332

Patent

active

053085949

ABSTRACT:
Wafers of silicon-on-insulator (SOI) produced by the zone melting recrystallization technique are known to exhibit warping and edge defects which prohibit their use in automated silicon wafer processing equipment. These deficiencies arise from excess heat buildup at the periphery of the wafer because the wafer edge acts as a barrier to heat transfer. Dissipation of heat from the edge by varying the heat dissipation efficiency of the environment about the periphery of the wafer allows wafers with substantially fewer defects to be produced.

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