Semiconductor memory with divided word lines and shared sense am

Static information storage and retrieval – Addressing

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

G11C 700

Patent

active

047978589

ABSTRACT:
A semiconductor memory device having a divided word line architecture in which each block of the memory array is divided into half-blocks and the half-blocks of each block are located on different halves of the device separated by the row decoder. A data line bussing scheme cooperates with this unique organization of the memory array to provide for sense amplifier sharing. This feature allows fewer, and larger sense amplifiers for better performance.

REFERENCES:
patent: 4482984 (1984-11-01), Oritani
patent: 4520465 (1985-05-01), Sood
patent: 4596000 (1986-06-01), Wiedmann
patent: 4596001 (1986-06-01), Baba
patent: 4596003 (1986-06-01), Shimizu
patent: 4615021 (1986-09-01), Yoshida et al.
patent: 4675845 (1987-06-01), Itoh et al.
patent: 4692901 (1987-09-01), Kumanoya et al.
patent: 4723228 (1988-02-01), Shah et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor memory with divided word lines and shared sense am does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory with divided word lines and shared sense am, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory with divided word lines and shared sense am will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2112308

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.