Method of making a semiconductor laser with a liquid phase epita

Details Method of making a semiconductor laser with a liquid phase epita Method of making a semiconductor laser with a liquid phase epita

1991-04-30

1993-03-09

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437126, 437117, H01L 2120

Patent

active

051927101

ABSTRACT:
A semiconductor laser which comprises a grating, a waveguide layer applied to the grating by LPE, and a plurality of layers disposed above the waveguide layer. This laser is characterized in that the layers disposed on the waveguide layer are applied with the aid of gas phase epitaxy or molecular beam epitaxy. Particularly preferred are MOVPE, MOMBE, GSMBE and CBE. Since the waveguide layer is applied with the aid of LPE directly onto the grating, the grating characteristics can be precisely predetermined. They remain intact during the application of the waveguide layer. The subsequent layers may be very thin. In particular, a very thin active layer or an MQW structure may be applied as the active layer. A buffer layer is provided between the waveguide layer and the active layer. A cladding layer and a ternary or quaternary contact layer lie above the active layer.

REFERENCES:
patent: 4477294 (1984-10-01), Gutierrez et al.
patent: 4966863 (1990-10-01), Mizuochi et al.
patent: 5033816 (1991-07-01), Blondeau et al.
A. W. Nelson, et al., "Deformation-Free Overgrowth of InGaAsP DFB Corrugations", Electronics Letters, vol. 19, No. 2, Jan. 20, 1983.
Electronics Letters, Jul. 7th 1983, vol. 19, No. 14, H. Asahi et al., "Hybrid LPE/MBE-Grown InGaAsP/InP DFB Lasers", pp. 507-509.
Japanese Journal of Applied Physics, vol. 22, No. 5, May, 1983, "Prevention of Surface Corrugation Thermal Deformation for InGaAsP/InP DFB Lasers", Haruo Nagai et al., L291-L293.
Patent Abstracts of Japan, vol. 14, No. 550, Dec. 1990.

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