Method of manufacturing field effect transistors having differen

Details Method of manufacturing field effect transistors having differen Method of manufacturing field effect transistors having differen

1990-10-31

1993-03-09

Quach, T. N.

Fishing, trapping, and vermin destroying

437 45, 437 56, 437 89, 437107, H01L 2120, H01L 21335

Patent

active

051927012

ABSTRACT:
A semiconductor device which comprises a semi-insulating substrate and a plurality of field effect transistors (FETs) formed on the semi-insulating substrate. An epitaxial layer of one conductivity type is formed on the semi-insulating substrate by a crystal growth technique which is capable of controlling a film thickness at an atomic level. At least some of channel active layers of the FETs have different threshold voltages one another due to a difference in thickness of the epitaxial layer and/or due to an additional ion implantation region selectively formed in the epitaxial layer. A manufacturing method of the semiconductor device is also disclosed, wherein a portion of the epitaxial layer corresponding to the channel active layer of a FET is thickened by the repetition of an epitaxial growth, thinned by the etching of the epitaxial layer or ion implanted thereby obtaining a different threshold voltage from that of another FET.

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