Radiation hardened semiconductor device and method of making the

Details Radiation hardened semiconductor device and method of making the Radiation hardened semiconductor device and method of making the

1987-04-13

1989-01-10

Larkins, William D.

357 2312, 357 42, H01L 2712, H01L 2978

Patent

active

047977213

ABSTRACT:
An N-channel transistor formed in a layer of semiconductor material disposed on a insulating substrate is disclosed. The source region has a depth less than the thickness of the semiconductor layer so that a P-type region can be formed in the semiconductor layer between the source region and the insulating substrate. This P-type region has an impurity concentration sufficient to prevent the depletion region of the source from extending to the interface between the layer of semiconductor material and the substrate. The P-type region substantially prevents back-channel leakage currents from flowing between the source region and the drain region along the portion of the layer of semiconductor material immediately adjacent the insulating substrate when the device has been irradiated.

REFERENCES:
patent: 4106045 (1978-08-01), Nishi
patent: 4183134 (1980-01-01), Oehler et al.
patent: 4199773 (1980-04-01), Goodman et al.
patent: 4393578 (1983-07-01), Cady et al.
patent: 4463492 (1984-08-01), Maeguchi
patent: 4509990 (1985-04-01), Vasudev

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