Sputtering device

Details Sputtering device Sputtering device

1981-06-22

1983-06-21

Demers, Arthur P.

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

204192R, C23C 1500

Patent

active

043892990

ABSTRACT:
The present application discloses a sputtering device comprising a target electrode having a target and a flat magnet located under the target and constituted by an annular magnetic pole having one polarity and a magnetic pole having the other polarity located inside the annular magnetic pole, a substrate disposed oppositely to the target, a ring electrode for electric field for generating an electric field on the magnet at right angle thereto, an electron beam emitting filament disposed adjacent the target, and an anode electrode for guiding an electron from the filament over the target.
According to the present invention, the target material can be effectively deposited to the substrate and efficiently act on the formation of a film.
In addition, since portions of the sputtered neutral target material are being ionized, the characteristics of the deposited film can be freely controlled by applying to the substrate a variable voltage for controlling the characteristics of a deposited film, so as to control the incident energy of the ionized target material to the substrate.

REFERENCES:
patent: 3404084 (1968-10-01), Hamilton
patent: 3669861 (1972-06-01), Cash et al.
Adachi et al., J. Vac. Sci. Tech. 20(1), 1982, pp. 98-99.

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