Master slice IC device

Details Master slice IC device Master slice IC device

1984-07-30

1987-07-21

James, Andrew J.

357 41, 357 42, 357 43, H01L 2710, H01L 2970, H01L 2978

Patent

active

046822020

ABSTRACT:
A master slice IC device comprising at least two kind of basic cells; that is, a first kind of basic cells each having one or more n-type MIS transistors and one or more p-type MIS transistors to form a CMIS logic circuit, and a second kind of basic cells each comprising an npn-type bipolar transistor and a pnp-type bipolar transistor to form a bipolar buffer circuit having a large drive ability. The second kind of basic cells are used, for example, only when the fan-out number is large and/or the length of the connection lines is long, thereby realizing a high degree of freedom in circuit design and a high operating speed without increasing the power consumption.

REFERENCES:
patent: 3609479 (1971-09-01), Lin et al.
patent: 4412237 (1983-10-01), Matsumura et al.
Carballo et al., "Self-Contained Bipolar-FET-Device", IBM Tech. Discl. Bull., vol. 19, No. 11, Apr. 1977, pp. 4191-4192.

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