Method of making a merge bipolar and complementary metal oxide s

Details Method of making a merge bipolar and complementary metal oxide s Method of making a merge bipolar and complementary metal oxide s

1986-10-24

1989-01-10

Roy, Upendra

Fishing, trapping, and vermin destroying

357 34, 357 42, 357 91, 437 31, 437 54, 437 57, H01L 2122, H01L 21265

Patent

active

047973722

ABSTRACT:
A method of making a merged bipolar and field effect semiconductor transistors on a semiconductor substrate by forming a diffused buried DUF collector region of a second conductivity type in the substrate, and growing an impurity doped epitaxial layer of silicon of the second conductivity type over the substrate. Once the epitaxial layer is grown, a plurality of isolation regions are formed in this layer. A bipolar transistor is formed over the DUF region in a bipolar isolation region and a field effect transistor formed in the second isolation region. Contacts and interconnects are deposited and patterned.

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