Method and apparatus for performing chemical vapor deposition

Details Method and apparatus for performing chemical vapor deposition Method and apparatus for performing chemical vapor deposition

1996-09-06

1997-11-25

Niebling, John

Fishing, trapping, and vermin destroying

437228, 437248, 4272552, 4272553, H01L 21443

Patent

active

056912366

ABSTRACT:
An apparatus and method for performing a chemical vapor deposition (CVD) procedure to deposit an insulating layer when fabricating semiconductor integrated circuit devices over a silicon wafer. The CVD apparatus includes a buffer chamber for temporarily holding the wafer, and a chemical vapor deposition reaction chamber arranged at the periphery of the buffer chamber and communicating with the buffer chamber via a first access door. The CVD apparatus additionally includes a heating chamber, also arranged at the periphery of the buffer chamber, and communicating with the buffer chamber via a second access door, for performing a heating treatment of the wafer before the insulating layer is deposited on the wafer in the CVD reaction chamber. A transport arm is provided for transporting the wafer into and out of the heating chamber and the chemical vapor deposition reaction chamber.

REFERENCES:
patent: 4951601 (1990-08-01), Maydan et al.
patent: 5124014 (1992-06-01), Foo et al.
patent: 5259881 (1993-11-01), Edwards et al.
patent: 5512320 (1996-04-01), Turner et al.

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