Process of fabricating semiconductor device having capacitor ele

Details Process of fabricating semiconductor device having capacitor ele Process of fabricating semiconductor device having capacitor ele

1996-03-06

1997-11-25

Tsai, Jey

Fishing, trapping, and vermin destroying

437 60, 437919, 437 47, H01L 218242

Patent

active

056912200

ABSTRACT:
A stacked storage capacitor of a dynamic random access memory cell has a p-type polysilicon layer forming an upper part of an accumulating electrode, a dielectric film structure and a p-type polysilicon counter electrode, and boron difluoride is ion implanted into a non-doped polysilicon layer for the counter electrode so as to decrease leakage current density rather than a boron-implanted polysilicon counter electrode.

REFERENCES:
patent: 5286668 (1994-02-01), Chou
patent: 5438541 (1995-08-01), Ando
patent: 5447878 (1995-09-01), Park et al.
patent: 5518946 (1996-05-01), Kuroda

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