Method of manufacturing a semiconductor memory device

Fishing – trapping – and vermin destroying

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437 47, 437 60, 437919, 437228, 148DIG14, H01L 2170

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active

056912196

ABSTRACT:
A semiconductor memory device having a semiconductor substrate, an insulating layer provided on the substrate, and a memory cell. The memory cell has a switching transistor provided on the substrate and a charge storage element in a trench made in the insulating layer. The charge storage element has a bottom electrode, a dielectric layer and a top electrode deposited one on another in the order mentioned.

REFERENCES:
patent: 5206183 (1993-04-01), Dennison
patent: 5238862 (1993-08-01), Blalock et al.
patent: 5391511 (1995-02-01), Doan et al.
patent: 5418180 (1995-05-01), Brown
patent: 5478772 (1995-12-01), Fazan

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