Semiconductor memory and process for manufacturing the same

Details Semiconductor memory and process for manufacturing the same Semiconductor memory and process for manufacturing the same

1992-10-20

1994-04-12

Fears, Terrell W.

Static information storage and retrieval

Floating gate

Particular biasing

36518901, 365149, G11C 1300

Patent

active

053031865

ABSTRACT:
A semiconductor memory comprises a plurality of non-volatile DRAMs and volatile DRAMs overlaying an identical semiconductor substrate, each of the non-volatile DRAMs comprising a word select transistor having a word selective gate electrode, a recall transistor having a recall gate electrode, a Flotox type memory transistor having a floating gate electrode and a capacitor having a storage node and a capacitor electrode, and each of the volatile DRAMs comprising a select transistor having a selective gate electrode and a capacitor having a capacitor lower electrode, a storage node and a capacitor upper electrode; the word selective gate electrode, the recall gate electrode and the floating gate electrode in the non-volatile DRAM and the selective gate electrode and the capacitor lower electrode in the volatile DRAM being formed of a first conductive layer on the semiconductor substrate, the storage nodes in the non-volatile DRAM and volatile DRAM being formed of a second conductive layer on the first conductive layer, the capacitor electrode in the non-volatile DRAM and the capacitor upper electrode in the volatile DRAM being formed of a third conductive layer on the second conductive layer, and any of the lower electrode and the upper electrode being common to a lower electrode and a upper electrode in their adjacent cells.

REFERENCES:
patent: 5210597 (1993-05-01), Kakiuchi et al.

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