High temperature cadmium boracite semiconductor device

Details High temperature cadmium boracite semiconductor device High temperature cadmium boracite semiconductor device

1978-02-23

1980-10-14

Larkins, William D.

Compositions

Radioactive compositions

Nuclear reactor fuel

252 623V, 357 1, 357 2, 357 10, 423277, 307310, H01L 2924, H01L 2946

Patent

active

042284546

ABSTRACT:
A cadmium boracite crystal electronic device, having at least one silver containing electrode, which is useful as a symmetric current controlling device for DC, DC pulse and AC circuits, an asymmetric current controlling device for DC and DC pulse circuits, a current rectifier for low frequency, AC, and as a temperature sensor.

REFERENCES:
patent: 3491026 (1970-01-01), Lehmann et al.
patent: 3686096 (1972-08-01), Hed et al.
patent: 3714633 (1973-01-01), Epstein et al.
patent: 3925537 (1975-12-01), Bither, Jr.
Journal of Crystal Growth, 33, (1976), pp. 361-364.
Jona, "Preparation . . . Boracite-Like Compounds," J. Phys. Chem., 63, (1959), pp. 1750-1752.

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