Magnetic sensor using tunnel resistance to detect an external ma

Details Magnetic sensor using tunnel resistance to detect an external ma Magnetic sensor using tunnel resistance to detect an external ma

1997-01-17

2000-09-26

Snow, Walter E.

Electricity: measuring and testing

Magnetic

Magnetometers

338 32R, 257421, 428611, H01L 4308, G01R 3309

Patent

active

061247111

ABSTRACT:
A magnetic sensor including a first magnetic layer having an axis of easy magnetization in a first direction; a second magnetic layer having an axis of easy magnetization in a second direction different from the first direction; a third magnetic layer positioned between the first magnetic layer and the second magnetic layer, and having a smaller coercive force than the first magnetic layer and the second magnetic layer; a first insulating layer interposed between the first magnetic layer and the third magnetic layer; and a second insulating layer interposed between the second magnetic layer and the third magnetic layer. An external magnetic field is detected by the use of tunnel resistance between the first magnetic layer and the third magnetic layer and tunnel resistance between the second magnetic layer and the third magnetic layer.

REFERENCES:
patent: 5287238 (1994-02-01), Baumgart et al.
patent: 5390061 (1995-02-01), Nakatani et al.
patent: 5416353 (1995-05-01), Kamiguchi et al.
patent: 5462795 (1995-10-01), Shinjo et al.
patent: 5658658 (1997-08-01), Yamamoto
"Magnetoresistance Effects in Spin-Valve Multilayers Including Three Ni-Fe-Co Layers", Shin Noguchi et al. (Central Research Laboratory, Hitachi, Ltd. Tokyo, Japan); Jpn J. Appl. Phys. vol. 33 (Oct. 1994) Pt. 1, No. 10, pp. 5734-5738.
Suezawa, Y., "Magnetic Tunneling Effect", IEEE Translation Journal on Magnetics in Japan, No. 5, pp. 361-367, New York, USA, May 8, 1993.

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