Process for growing crystals

Details Process for growing crystals Process for growing crystals

1995-08-31

1997-11-25

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 37, 117 43, C30B 1302

Patent

active

056907354

ABSTRACT:
In order to improve a process for growing crystals from a molten zone which is heated and to which a source material is supplied which is melted and deposited in crystalline form on a substrate from the molten zone, such that dimensions of the substrate along an interface between the substrate and the molten zone are dependent to a lesser extent on dimensions of the source material supplied to the molten zone, it is suggested that the molten zone be mechanically stabilized by a wall member which forms a boundary of the molten zone and is essentially immovable relative to the molten zone, a base member which forms a lower boundary of the molten zone and is movable relative to the wall member and a meniscus arranged between the base member and the wall member.

REFERENCES:
patent: 2875108 (1959-02-01), Pfann
patent: 4707217 (1987-11-01), Akluff
patent: 4737233 (1988-04-01), Kamgar et al.
R.S. Feigelson, "Pulling Optical Fibers," Journal of Crystal Growth, vol. 79 (1986), pp. 669-680.

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