Method of producing a compound semiconductor crystal layer with

Details Method of producing a compound semiconductor crystal layer with Method of producing a compound semiconductor crystal layer with

1995-06-01

1996-03-12

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437126, 437133, 117 84, 117 88, 117 89, H01L 2120

Patent

active

054985684

ABSTRACT:
After a GaAs substrate is set in a reaction container, the pressure in the reaction container is reduced to 10-100 torr and arsine is supplied into the container. A GaAs buffer layer is formed on the GaAs substrate by introducing TMG when the surface temperature of the GaAs substrate is at 650.degree. C. Then, by stopping supply of TMG, the growth of the GaAs buffer layer is stopped (step I). Arsine is switched to phosphine. A time t after the switching, TMA, TMG and TMI adjusted at a predetermined mixing ratio beforehand are introduced into the container, thereby starting the formation of an InGaAlP layer on the GaAs buffer layer. During the growing process, the surface temperature of the GaAs substrate is raised to 750.degree. C. (step II). The InGaAlP layer is grown to a predetermined thickness with the surface temperature of the GaAs substrate being kept at 750.degree. C. (step III).

REFERENCES:
patent: 5037674 (1991-08-01), Kojima et al.
patent: 5204284 (1993-04-01), Kuo et al.

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