Method of making a metal gate high voltage integrated circuit

Details Method of making a metal gate high voltage integrated circuit Method of making a metal gate high voltage integrated circuit

1993-11-01

1996-03-12

Fourson, George

Fishing, trapping, and vermin destroying

437 57, 437 40, 148DIG126, H01L 218238

Patent

active

054985536

ABSTRACT:
A semiconductor is made on a silicon substrate containing an impurity of a predetermined polarity having formed therein a well containing an impurity of an opposite polarity to a region in the silicon is provided. The method comprises forming a first masking layer on the surface of the substrate, providing openings in the masking layer and implanting dopant ions of a first polarity into the surface of the substrate in a set of first implant regions in the well on either side of a first central region in the well and in a set of second implant regions adjacent to the well on either side of a second central region adjacent to the well, formation of insulating structures over the first and second regions, forming gate oxide layers above the first and second central regions, forming a second masking layer on the surface of the substrate, providing openings in the masking layer and implanting dopant ions of a second polarity into the surface of the substrate in a set of second implant regions in the well on either side of a first central region in the well and in a set of fourth implant regions adjacent to the well on either side of a second central region adjacent to the well, and formation of conductive gate structures over the gate oxide layers.

REFERENCES:
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patent: 5250455 (1993-10-01), Ohzone et al.
patent: 5336926 (1994-08-01), Matthews
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patent: 5376568 (1994-12-01), Yang
Z. Parpia et al. "A Novel CMOS-Compatible High Voltage Transistor Structure" IEEE Trans Electron Devices, vol. ED-33, pp. 1948-1952 (Dec. 1986).
R. Jayaraman et al, "Comparison of High Voltage Devices for Power Integrated Circuits" pp. IEDM 84 258-261 (1984).

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