Resistless device fabrication method

Details Resistless device fabrication method Resistless device fabrication method

1998-05-15

2000-09-26

Smith, Matthew

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Mesa formation

438506, 438505, 438478, 438487, 257134, 257153, H01L 2100

Patent

active

061241466

ABSTRACT:
A method of depositing a material to a semiconductor device having a first mesa structure, a second mesa structure and a valley. Material is deposited from a first angular direction sufficient to substantially mask the valley with a first of the mesa structures and from a second angular direction sufficient to substantially mask the valley with the second mesa structure to form a first lip and a second lip on the respective first and second mesa structures overlying the valley and defining a space therebetween less than the width of the valley. Material is then deposited to the device from a third direction in substantial opposition to the device, the space operating to guide material deposition to the valley to provide discrete material deposition in the valley to form a discrete feature in the valley.

REFERENCES:
patent: 4417385 (1983-11-01), Temple
patent: 5258319 (1993-11-01), Inuishi et al.
patent: 5504347 (1996-04-01), Jovanovic et al.
patent: 5516711 (1996-05-01), Wang
patent: 5580419 (1996-12-01), Berenz
patent: 5789272 (1998-08-01), Wang et al.
patent: 6013538 (2000-01-01), Burrows et al.

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