Overlay measurement mark and method of measuring an overlay erro

Details Overlay measurement mark and method of measuring an overlay erro Overlay measurement mark and method of measuring an overlay erro

1994-12-27

1996-03-12

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Registration or layout process other than color proofing

430 5, 430 30, 355 53, G03F 900

Patent

active

054985005

ABSTRACT:
An overlay measurement mark and a method of measuring an overlay error between multi patterns of a semiconductor device. A first overlay measurement patterns are formed on a first selected portion of a scribe line by a first mask which is formed considering the margin between the first mask pattern and the second pattern, with the first overlay measurement pattern consisting of two patterns spacing parallel to each other. A second overlay measurement patterns are formed on a second selected portion of the scribe line by a second mask which is formed considering the margin between the second mask pattern and the third mask pattern so as not to superimpose the first overlay measurement patterns, with the second overlay measurement patterns consisting of two patterns spacing parallel to each other. A third overlay measurement pattern is formed on the scribe line by a third mask which is used to form the third mask pattern, with said third overlay measurement pattern forming at the center of inside the first and second overlay measurement patterns. The distance between the first overlay measurement patterns and the third overlay measurement pattern, and the distance between the second overlay measurement patterns and the third overlay measurement pattern, are measured.

REFERENCES:
patent: 4883359 (1989-11-01), Ina et al.
patent: 5389479 (1995-02-01), Morimoto et al.

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