Semiconductor having an improved electrode pad

Details Semiconductor having an improved electrode pad Semiconductor having an improved electrode pad

1991-07-17

1992-12-15

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Bump leads

257751, 257765, 257780, H01L 2354

Patent

active

051722127

ABSTRACT:
A semiconductor device is provided with a semiconductor substrate, an oxide film formed on the surface of the semiconductor substrate, an electrode pad formed on a region arbitrarily limited to the surface of this oxide layer, an insulation protection film that is laminated and formed on a peripheral portion of the electrode pad and the surface of the oxide layer where a central portion of this electrode pad is exposed, and a metal barrier film that is formed by covering the surface of a central exposed portion of the electrode pad, to prevent the corrosion of an electrode surface when wires are bonded and the electrode pad and wires are connected. This semiconductor device is manufactured by a method including a step of forming an electrode pad on an oxide film, a step of laminating an insulation protection film on the electrode pad and the oxidation film and of implementing patterning by a resist film onto the insulation protection film and for the selective removal of the insulation protection film so that an opening is made in the insulation protection film in a portion on the electrode pad, a step of laminating a metal barrier film on the electrode pad and the resist film, and a step of removing the resist film so that a portion of the resist film in the metal barrier film is removed.

REFERENCES:
patent: 4742023 (1988-05-01), Hasegawa
patent: 4937652 (1990-06-01), Okumura et al.
patent: 4974054 (1990-11-01), Anjo

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