Method for forming a nested surface capacitor

Fishing – trapping – and vermin destroying

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437 60, 437919, H01L 2170, H01L 2700

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active

052665127

ABSTRACT:
A nested surface capacitor and method of formation. The nested surface capacitor has a substrate (14) and an overlying dielectric layer (16). Conductive layer (18) overlies the dielectric layer (16). Three conductive cylindrical structures respectively referred to as an inner cylinder (30), a central cylinder (22') and an outer cylinder (32) overlie the conductive layer (18). The inner cylinder (30) lies within the central cylinder (22'). The central cylinder (22') lies within the outer cylinder (32). Together, the conductive layer (18) and the cylinders (30, 22', and 32) form a first electrode for the nested surface capacitor. A dielectric layer (38) overlying the cylinders (30, 22', and 32) and the conductive layer (18) acts as a capacitor dielectric. A conductive layer (40) overlying the dielectric layer (38) forms a second electrode of the capacitor.

REFERENCES:
patent: 5047815 (1991-09-01), Yasuhira et al.
patent: 5047817 (1991-09-01), Wakamiya et al.
patent: 5061650 (1991-10-01), Dennison et al.
patent: 5084405 (1992-01-01), Fazan et al.
patent: 5126280 (1992-06-01), Chan et al.
patent: 5185282 (1993-02-01), Lee et al.
Kaga et al. "Crown Shaped Stack Capacitor Cell For 1.5-V Operation 64 Mb DRAM's-IEEE Transactions on Electron Device", vol. 38, No. 2, Feb. 1991, pp. 255-261.

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