STM memory medium

Fishing – trapping – and vermin destroying

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437 52, H01L 21265

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active

052665020

ABSTRACT:
An STM memory medium comprising a substrate whose surface is smooth or even, a first insulating layer formed at a predetermined depth in the substrate by implanting first ion atoms from the smooth surface of the substrate into it under a certain condition, and a second insulating layer formed adjacent to the first insulating layer and at another predetermined depth in the substrate by implanting second ion atoms from the smooth surface of the substrate into it under another certain condition.

REFERENCES:
patent: 4262056 (1981-04-01), Hubler et al.
patent: 4948742 (1990-08-01), Nishimura et al.
patent: 4968636 (1990-11-01), Sugawara
Binning et al., Physical Review Letters-vol. 49-No. 1-Jul. 5, 1982 Surface Studies by Scanning Tunneling Microscopy.
IBM J. Res. Develop., vol. 30, No. 4, Jul. 1986, "Spectroscopy of electronic states of metals with a scanning tunneling microscope", Kaiser et al., pp. 411-416.
Binning et al., IBM J. Res. Develop., vol. 30, No. 4, Jul. 1986, "Scanning tunneling microscopy" pp. 355-369.
de Lozanne et al., "Spatial Variations in the Superconductivity of Nb.sub.3 Sn . . . " Physical Review Letters, vol. 54, No. 22, 3 Jun. 1985 pp. 2433-2436.
Hamers et al., "Surface Electronic Structure of S;(111)-(7x7) Resolved in Real Space", Physical Review Letters, vol. 56, No. 18, 5 May 1986 pp. 1972-1975.
Kuk et al-Rev. Sci. Instrum. 60(2), Feb. 1989 "Scanning tunneling microscope instrumentation", pp. 165-180.
J. Vac. Sci. Technol. A6(2), Mar./Apr. 1988, "Scanning tunneling spectroscopy study on graphite and 2H-NbSe.sub.2 ", Bando et al., pp. 344-348.
Marchon et al., "Atomic Arrangement of Sulfur Adatoms . . . ", Physical Review Letters, vol. 60, No. 12, 21 Mar. 1988, pp. 1166-1169.

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