Turn-off, MOS-controlled, power semiconductor component

Details Turn-off, MOS-controlled, power semiconductor component Turn-off, MOS-controlled, power semiconductor component

1995-03-24

1997-12-16

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257139, H01L 2974, H01L 31111

Patent

active

056988672

ABSTRACT:
In a MOS-controlled turn-off thyristor (MCT), a conventional integral cell with a combined emitter and short-circuiting function is replaced by a separate DMOS cell (D) and emitter cell (E). The DMOS cell (D) contains a five-layer sequence of cathode short-circuit region (18), first channel region (19), second base layer (7), first base layer (8) and emitter layer (9). The emitter cell (E) contains a four-layer sequence of first emitter region (20), second base layer (7), first base layer (8) and emitter layer (9). This basic structure produces a component which is easy to produce and is distinguished by a high reverse-blocking capability.

REFERENCES:
patent: 4611128 (1986-09-01), Patalong
Baliga et al, "The Insulated Gate Transistor . . . ", IEEE Trans on ED, vol. ED31 No.6, Jun. 1984.
Temple, "MOS-Controlled Thristors . . . ", IEEE Trans on ED, vol. ED33 No. 10, Oct. 1986.
IEEE Transactions on Electron Devices, vol. ED-31, No. 6, Jun. 1984, B.J. Baliga, et al., "The Insulated Gate Transistor: A New Three-Terminal MOS-Controlled Bipolar Power Device" IEEE Transactions on Electron Devices, vol. ED-33, No. 10, Oct. 1986, V.A. Temple, MOS-Controlled Thyristors-A New Class of Power Devices.

Affiliated with

Also associated with

Rating

Turn-off, MOS-controlled, power semiconductor component does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Turn-off, MOS-controlled, power semiconductor component, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Turn-off, MOS-controlled, power semiconductor component will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-209368