Method for photo annealing non-single crystalline semiconductor

Details Method for photo annealing non-single crystalline semiconductor Method for photo annealing non-single crystalline semiconductor

1990-05-09

1992-12-15

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 82, 437101, 437108, 437109, 437247, 437908, 437942, 148DIG1, 148DIG3, 148DIG4, 148DIG61, 148DIG90, 148DIG93, H01L 2120, H01L 21324

Patent

active

051717107

ABSTRACT:
An improved semiconductor processing is disclosed. In the manufacturing process, a semiconductor layer is formed and then undergoes photo annealing. A neutralizer is then introduced to the photoannealed semiconductor. The semiconductor thus formed demonstrates the SEL effect instead of the Staebler-Wronski effect.

REFERENCES:
patent: 4151058 (1979-04-01), Kaplan et al.
patent: 4226898 (1980-10-01), Ovshinsky et al.
patent: 4398343 (1983-08-01), Yamazaki
patent: 4402762 (1983-09-01), John et al.
patent: 4888305 (1989-12-01), Yamazaki

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