Method for the production of a semiconductor laser device

Details Method for the production of a semiconductor laser device Method for the production of a semiconductor laser device

1991-08-01

1992-12-15

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437107, 437946, H01L 21203, H01L 3300, H01S 3025

Patent

active

051717069

ABSTRACT:
There is provided a method for the production of a semiconductor laser device which emits laser light from a facet. The method includes the steps of: growing a multi-layered structure containing an active layer for laser oscillation on a semiconductor substrate to form a wafer; etching the multi-layered structure to form a striped groove perpendicular to the direction of an optical waveguide, resulting in a pair of resonator facets; bringing the facets into contact with a sulfur-containing solution; subjecting the facets to heat treatment; growing a semiconductor layer on the surface of the facets, which has a band gap greater than that of the active layer; and cleaving the wafer along the striped groove to obtain a semiconductor laser device.

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