Field effect transistor device

Details Field effect transistor device Field effect transistor device

1987-10-13

1988-08-30

James, Andrew J.

Oscillators

Relaxation oscillators

357 81, 357 51, 357 57, 331117FE, 331107DP, H01L 2350, H01L 2976, H03B 914

Patent

active

047680792

ABSTRACT:
A two-terminal field effect transistor device which is capable of operation as an oscillator including a field effect transistor connected in a two-terminal manner. The transistor has the usual drain source and gate electrodes and oscillating instability is provided by means of an inductance means of value so as to provide this circuit instability to enable circuit oscillations. The two-terminal arrangement is enabled by means of essentially interconnecting the gate and drain electrodes by way of said inductance means.

REFERENCES:
patent: 3767946 (1973-10-01), Berger et al.
patent: 4566027 (1986-01-01), Heitzmann et al.
patent: 4611882 (1986-09-01), Ushida
Schellenberg et al., 1981, IEEE MTT-S International Microwave Symposium, Los Angeles, 15-19 Jun. 1981, pp. 328-330.
Tsironis et al., Electronics Letter, Apr. 15, 1982, vol. 18, No. 8, pp. 345-347.

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