Semiconductor type pressure sensor

Measuring and testing – Fluid pressure gauge – Electrical

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Details

73715, G01L 900, G01L 708

Patent

active

061229741

ABSTRACT:
A pressure sensor superior in pressure resistance and capable of covering from a low to high pressure range as a measuring range is to be provided. Plural pressure sensing sections for high and low pressures are formed on a silicon board, the pressure sensing sections each com ing an outer frame portion, a diaphragm portion, a strain gauge portion and an electrode portion. The silicon board side with the strain gauge portions formed thereon and an insulating substrate having electrode take-out portions are bonded together in such a manner that the strain gauge portions are hermetically sealed and that the electrode portions on the silicon board and the electrode take-out portions of the insulating substrate are electrically connected with each other, to constitute a pressure sensing unit. The pressure sensing unit, a low-melting glass and a stem are laminated together in such a manner that lead pins are electrically bonded by solder to the electrode portions of the silicon board through the electrode take-out portions of the insulating substrate. In this state, the low-melting glass is melted to bond the pressure sensing unit and the stem with each other.

REFERENCES:
patent: 4314225 (1982-02-01), Tominaga et al.
patent: 4780572 (1988-10-01), Kondo et al.
patent: 4838089 (1989-06-01), Okada et al.
patent: 4993265 (1991-02-01), Koen et al.
patent: 5101665 (1992-04-01), Mizuno
patent: 5511428 (1996-04-01), Goldberg et al.

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