Solid-state image sensing device and method of controlling the s

Details Solid-state image sensing device and method of controlling the s Solid-state image sensing device and method of controlling the s

1996-08-01

1997-12-16

Le, Que

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

2502081, 348300, H01J 4014

Patent

active

056988443

ABSTRACT:
A solid-state image sensing device has an inverting-amplifier constructed with MOS transistors, which is provided with electrical power through a common output line, and inputs and outputs signals through the common output line. With this configuration, a supply line conventionally used exclusively for supplying electrical power does not pass through a pixel of a solid-state image sensing device, thereby reducing difficulty of manufacturing a fine pixel and making a large aperture area. The inverting-amplifier of this solid-state image sensing device is reset to the same voltage as that of the common output line, and an offset voltage is read out. Thereafter, the electric charge inputted into the inverting-amplifier from a photo-electric converter is inverted and amplified, and the resultant signal is read out. Finally, a difference between the inverted and amplified signal and the offset voltage is obtained and outputted as an image signal.

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"A 128 .times. CMOS Active Pixel Image Sensor for Highly Integrated Imaging Systems", Sunetra K. Mendis, Sabrina E. Kemeny and Eric R. Fossum, Center for Space Microelectronics Technology Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Drive, Pasadena, CA 91109, IEDM, IEEE, pp. 583-586, Jan. 1993.

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