Photodetector

Details Photodetector Photodetector

1985-03-04

1986-06-24

Davie, James W.

357 13, 357 16, 357 58, 357 90, H01L 2714, H01L 3100

Patent

active

045970041

ABSTRACT:
A photodetector includes a cap layer over an absorptive layer with the P-N junction formed in the absorptive layer by diffusion of conductivity modifiers from the cap layer. If this diffusion extends too far into the absorptive layer, the detector is rendered useless. The invention includes a photodetector with a buffer layer between the absorptive and cap layers. The concentration of conductivity modifiers is substantially constant in the cap layer, decreases with distance in the buffer layer from the cap layer and extends into the absorptive layer. The invention also includes a method of making this device which includes the steps of forming a buffer layer over the absorptive layer, forming a cap layer over the buffer layer and diffusing the opposite type conductivity modifiers from the cap layer into the buffer and absorptive layers.

REFERENCES:
patent: 4383269 (1983-05-01), Capasso
patent: 4473835 (1984-09-01), Forrest et al.
patent: 4553155 (1985-11-01), Chen et al.
P. P. Webb et al., IEEE Transactions on Electron Devices, vol. ED-30, No. 4., Apr. 1983, pp. 395-400.
G. H. Olsen in GaInAsP Alloy Semiconductors, T. P. Pearsall, ed., John Wiley & Sons (New York 1982) pp. 11-41.

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